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ZXMN10A07FTC

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ZXMN10A07FTC

MOSFET N-CH 100V 700MA SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated ZXMN10A07FTC is an N-Channel MOSFET designed for surface mount applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 700mA at 25°C. With a maximum power dissipation of 625mW (Ta), it is suitable for power management in various electronic systems. The device exhibits a low Rds On of 700mOhm at 1.5A and 10V, indicating efficient conduction. Key parameters include a gate charge (Qg) of 2.9 nC at 10V and an input capacitance (Ciss) of 138 pF at 50V. The ZXMN10A07FTC operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a SOT-23-3 package, commonly used in consumer electronics and industrial control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C700mA (Ta)
Rds On (Max) @ Id, Vgs700mOhm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds138 pF @ 50 V

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