ZXM66P03N8TA
MOSFET P-CH 30V 6.25A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXM66P03N8TA is a P-Channel MOSFET designed for high-efficiency power management applications. This component features a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 6.25A at 25°C, with a maximum power dissipation of 1.56W. The device offers a low on-resistance (Rds On) of 25mOhm at 5.6A and 10V, achievable with drive voltages between 4.5V and 10V. Key electrical characteristics include a maximum gate charge (Qg) of 36 nC at 5V and input capacitance (Ciss) of 1979 pF at 25V. The ZXM66P03N8TA is housed in an 8-SOIC package and supports surface mount installation. It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in industrial, automotive, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.25A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1979 pF @ 25 V |
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