ZXM66P02N8TC
MOSFET P-CH 20V 6.4A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXM66P02N8TC is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) capacity of 6.4 A at 25°C. The Rds(On) is specified at a maximum of 25 mOhm when conducting 3.2 A with a Vgs of 4.5 V, indicating low conduction losses. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and is supplied on tape and reel. Key parameters include a maximum power dissipation of 1.56 W (Ta), a Gate Charge (Qg) of 43.3 nC at 4.5 V, and an input capacitance (Ciss) of 2068 pF at 15 V. The threshold voltage (Vgs(th)) is a maximum of 700 mV at 250 µA. This MOSFET is suitable for use in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 43.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2068 pF @ 15 V |