ZXM66P02N8TA
MOSFET P-CH 20V 6.4A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXM66P02N8TA is a P-channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 6.4A at 25°C (Ta). The Rds On is specified at a maximum of 25mOhm at 3.2A and 4.5V Vgs, with drive voltages ranging from 2.5V to 4.5V. The device offers a low Gate Charge (Qg) of 43.3 nC at 4.5V and an Input Capacitance (Ciss) of 2068 pF at 15V. With a maximum power dissipation of 1.56W (Ta) and an operating temperature range of -55°C to 150°C (TJ), it is suited for demanding environments. The ZXM66P02N8TA is housed in an 8-SOIC package and is supplied on tape and reel. This MOSFET is commonly utilized in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 43.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2068 pF @ 15 V |
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