ZXM64P035GTA
MOSFET P-CH 35V 3.8A/5.3A SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated ZXM64P035GTA is a P-Channel MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 35V and supports continuous drain currents of 3.8A at ambient temperature (Ta) and 5.3A at case temperature (Tc). The device offers a maximum power dissipation of 2W (Ta) and a low on-resistance (Rds On) of 75mOhm at 2.4A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 825 pF at 25V. The ZXM64P035GTA is housed in a SOT-223-3 (TO-261-4, TO-261AA) surface-mount package, suitable for operation across a wide temperature range of -55°C to 150°C. This MOSFET is commonly employed in applications such as power supplies, battery management, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 825 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
