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ZXM64P02XTC

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ZXM64P02XTC

MOSFET P-CH 20V 3.5A 8MSOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXM64P02XTC is a P-Channel MOSFET designed for efficient power switching applications. This device features a 20V Drain-Source Voltage (Vdss) and supports a continuous drain current of 3.5A at 25°C ambient temperature, with a maximum power dissipation of 1.1W. The Rds(On) is specified at a maximum of 90mOhm when conducting 2.4A with a 4.5V Vgs. Key parameters include a gate charge (Qg) of 6.9 nC at 4.5V and input capacitance (Ciss) of 900 pF at 15V. The ZXM64P02XTC is housed in an 8-MSOP (8-TSSOP) surface mount package, suitable for automated assembly. Its robust operating temperature range of -55°C to 150°C makes it suitable for demanding environments in automotive and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 2.4A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 15 V

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