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ZXM64N03XTC

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ZXM64N03XTC

MOSFET N-CH 30V 5A 8MSOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated ZXM64N03XTC is a high-performance N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 5A at 25°C. The Rds(On) is specified at a maximum of 45mOhm at 3.7A and 10V gate drive, with a typical gate charge of 27 nC at 10V. Input capacitance (Ciss) is a maximum of 950 pF at 25V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is packaged in an 8-MSOP (8-TSSOP, 8-MSOP 0.118", 3.00mm Width) for surface mounting. Maximum power dissipation is 1.1W. This device is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 3.7A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 25 V

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