Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

ZXM64N03XTA

Banner
productimage

ZXM64N03XTA

MOSFET N-CH 30V 5A 8MSOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXM64N03XTA, an N-Channel MOSFET, features a 30V drain-source voltage and a continuous drain current of 5A at 25°C. This component offers a maximum Rds(on) of 45mOhm at 3.7A and 10V Vgs, with gate drive voltages ranging from 4.5V to 10V. The device exhibits a maximum gate charge of 27 nC at 10V and input capacitance of 950 pF at 25V. With a power dissipation of 1.1W (Ta) and a maximum Vgs of ±20V, the ZXM64N03XTA is suitable for operation between -55°C and 150°C. It is packaged in an 8-MSOP (8-TSSOP) in Tape & Reel. This MOSFET is utilized in various industrial applications requiring efficient switching and power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 3.7A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
DMN2053UQ-7

MOSFET BVDSS: 8V~24V SOT23 T&R 3

product image
DMN2011UFDF-13

MOSFET N-CH 20V 14.2A 6UDFN

product image
DMN3008SFGQ-13

MOSFET N-CH 30V PWRDI3333