ZXM64N035GTA
MOSFET N-CH 35V 4.8A/6.7A SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXM64N035GTA is an N-Channel MOSFET designed for efficient power switching applications. This component features a 35V Drain-Source voltage (Vdss) and supports a continuous drain current of 4.8A at ambient temperature (Ta) and 6.7A at case temperature (Tc). The device offers a maximum power dissipation of 2W (Ta) and a low on-resistance (Rds On) of 50mOhm at 3.7A and 10V gate-source voltage. It is housed in a SOT-223-3 surface-mount package, compatible with TO-261-4/TO-261AA footprints, and supplied on tape and reel. Key electrical characteristics include a maximum gate charge (Qg) of 27 nC at 10V and a maximum input capacitance (Ciss) of 950 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in various electronic systems, including power management and switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta), 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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