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ZXM64N02XTC

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ZXM64N02XTC

MOSFET N-CH 20V 5.4A 8MSOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated ZXM64N02XTC is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 5.4A at 25°C, with a maximum power dissipation of 1.1W (Ta). The Rds On is specified at 40mOhm maximum at 3.8A and 4.5V Vgs. It utilizes Metal Oxide technology and is housed in an 8-MSOP package, suitable for surface mounting. Key parameters include a Gate Charge (Qg) of 16 nC at 4.5V Vgs and an Input Capacitance (Ciss) of 1100 pF at 15V Vds. This device operates within an ambient temperature range of -55°C to 150°C. Commonly found in consumer electronics and industrial control systems, the ZXM64N02XTC offers reliable performance for demanding power management tasks.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.4A (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 3.8A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 15 V

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