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ZXM64N02XTA

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ZXM64N02XTA

MOSFET N-CH 20V 5.4A 8MSOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXM64N02XTA is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 5.4A at 25°C ambient. The Rds On is specified at a maximum of 40mOhm at 3.8A drain current and 4.5V gate-to-source voltage. With a gate charge (Qg) of 16 nC at 4.5V and input capacitance (Ciss) of 1100 pF at 15V, it offers optimized switching performance. The device is housed in an 8-MSOP package, suitable for surface mounting. Its maximum power dissipation is 1.1W (Ta). Key drive voltages for achieving low Rds On are 2.7V and 4.5V. This MOSFET is utilized across various industries including industrial automation, consumer electronics, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.4A (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 3.8A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 15 V

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