ZXM62P03GTA
MOSFET P-CH 30V 2.9A/4A SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXM62P03GTA is a P-Channel MOSFET designed for high-efficiency power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2.9A at ambient temperature (Ta) and 4A at case temperature (Tc). The device offers a low on-resistance (Rds On) of 150mOhm maximum at 1.6A and 10V gate-source voltage (Vgs).
The ZXM62P03GTA is housed in a compact SOT-223-3 package, facilitating surface mounting for streamlined PCB layouts. It supports a wide operating temperature range from -55°C to 150°C (TJ). Key electrical characteristics include a maximum gate charge (Qg) of 10.2 nC at 10V and a maximum input capacitance (Ciss) of 330 pF at 25V drain-source voltage. The device is suitable for use in various industries including automotive, industrial, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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