ZXM62P03E6TC
MOSFET P-CH 30V 1.5A SOT26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXM62P03E6TC is a P-Channel Power MOSFET designed for efficient power management. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 1.5A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 230mOhm maximum at 800mA and 4.5V gate-source voltage. With a maximum power dissipation of 625mW (Ta), it is suitable for applications requiring compact thermal management. The ZXM62P03E6TC utilizes a SOT-26 package, facilitating surface mounting. Key parameters include a gate charge (Qg) of 10.2 nC at 10V and input capacitance (Ciss) of 330pF at 25V. This MOSFET is commonly employed in industrial, automotive, and consumer electronics sectors. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 1V at 250µA. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 800mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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