ZXM61P03FTC
MOSFET P-CH 30V 1.1A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXM61P03FTC is a P-Channel enhancement mode MOSFET designed for general-purpose switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 1.1A at 25°C. The Rds(On) is specified at a maximum of 350mOhm when driven at 10V Vgs and conducting 600mA. The power dissipation capability is 625mW at 25°C ambient. Key parameters include a Gate Charge (Qg) of 4.8 nC maximum at 10V Vgs and Input Capacitance (Ciss) of 140 pF maximum at 25V Vds. The threshold voltage (Vgs(th)) is 1V at 250µA. This component is housed in a SOT-23-3 package and is supplied on tape and reel. Its construction utilizes MOSFET technology. Typical applications include power management and load switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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