ZXM61P02FTC
MOSFET P-CH 20V 900MA SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated ZXM61P02FTC is a P-Channel MOSFET with a drain-source voltage (Vdss) of 20V. This component features a continuous drain current (Id) of 900mA at 25°C and a maximum power dissipation of 625mW under the same conditions. The device offers a low on-resistance (Rds On) of 600mOhm maximum at 610mA and 4.5V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 3.5nC maximum at 4.5V and input capacitance (Ciss) of 150pF maximum at 15V. The ZXM61P02FTC utilizes Metal Oxide technology and is supplied in a SOT-23-3 surface mount package. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 610mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 15 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
