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ZXM61P02FTC

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ZXM61P02FTC

MOSFET P-CH 20V 900MA SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXM61P02FTC is a P-Channel MOSFET with a drain-source voltage (Vdss) of 20V. This component features a continuous drain current (Id) of 900mA at 25°C and a maximum power dissipation of 625mW under the same conditions. The device offers a low on-resistance (Rds On) of 600mOhm maximum at 610mA and 4.5V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 3.5nC maximum at 4.5V and input capacitance (Ciss) of 150pF maximum at 15V. The ZXM61P02FTC utilizes Metal Oxide technology and is supplied in a SOT-23-3 surface mount package. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C900mA (Ta)
Rds On (Max) @ Id, Vgs600mOhm @ 610mA, 4.5V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 15 V

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