ZXM61N03FTC
MOSFET N-CH 30V 1.4A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated ZXM61N03FTC is an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 1.4A at 25°C. With a maximum power dissipation of 625mW (Ta), it is suitable for compact designs. The device exhibits a low on-resistance (Rds On) of 220mOhm at 910mA and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 4.1 nC and input capacitance (Ciss) of 150 pF at 25V. The ZXM61N03FTC is housed in a SOT-23-3 package, facilitating surface mounting. It operates across an industrial temperature range of -55°C to 150°C. This MOSFET finds application in consumer electronics, industrial automation, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 910mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
