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ZXM41N10FTC

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ZXM41N10FTC

MOSFET N-CH 100V 170MA SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXM41N10FTC is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 170mA at 25°C. The Rds On is specified at a maximum of 8 Ohms when driven at 150mA with a 4.5V Vgs. With a maximum power dissipation of 360mW (Ta) and an input capacitance (Ciss) of 25pF at 25V, the ZXM41N10FTC is packaged in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount configuration, supplied on tape and reel. It is suitable for use in consumer electronics and industrial automation. The gate-source voltage (Vgs) tolerance is ±40V, and the gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 1mA. Drive voltages for optimal Rds On performance range from 3V to 4.5V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Rds On (Max) @ Id, Vgs8Ohm @ 150mA, 4.5V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)3V, 4.5V
Vgs (Max)±40V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds25 pF @ 25 V

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