ZVP4525GTC
MOSFET P-CH 250V 265MA SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZVP4525GTC is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 265mA at 25°C. The Rds On is specified at a maximum of 14 Ohm at 200mA and 10V gate drive. Key parameters include a Gate Charge (Qg) of 3.45 nC (max) and Input Capacitance (Ciss) of 73 pF (max). The ZVP4525GTC is packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface mount configuration and supports a wide operating temperature range from -55°C to 150°C. Maximum power dissipation is 2W (Ta). This component is utilized in industries such as industrial control and power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 265mA (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 3.5V, 10V |
| Vgs (Max) | ±40V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 73 pF @ 25 V |
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