ZVP4525E6TC
MOSFET P-CH 250V 197MA SOT23-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZVP4525E6TC is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 197 mA at 25°C. With a maximum power dissipation of 1.1W (Ta), it is suitable for various power management tasks. The device is housed in a compact SOT-23-6 package, enabling efficient surface mounting. Key parameters include a maximum Rds On of 14 Ohms at 200 mA and 10 V Vgs, and a gate charge (Qg) of 3.45 nC at 10 V. Input capacitance (Ciss) is a maximum of 73 pF at 25 V. This MOSFET is commonly utilized in power supplies, battery management, and general-purpose switching applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 197mA (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 3.5V, 10V |
| Vgs (Max) | ±40V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 73 pF @ 25 V |
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