ZVP3310FTC
MOSFET P-CH 100V 75MA SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZVP3310FTC is a P-Channel enhancement mode MOSFET designed for high-performance applications. This device features a drain-to-source breakdown voltage (Vdss) of 100V and a continuous drain current (Id) of 75mA at 25°C. The Rds(on) is specified at a maximum of 20 Ohms when driven at 10V with a drain current of 150mA. With a gate-source voltage (Vgs) threshold of 3.5V (max) at 1mA, it offers efficient switching characteristics. The input capacitance (Ciss) is a maximum of 50pF at 25V. This component is packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount package, supplied on tape and reel. The maximum power dissipation (Pd) is 330mW (Ta) with an operating temperature range of -55°C to 150°C. Industries leveraging this component include automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75mA (Ta) |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 150mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330mW (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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