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ZVP3310ASTOB

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ZVP3310ASTOB

MOSFET P-CH 100V 140MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVP3310ASTOB is a P-Channel MOSFET designed for general purpose switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 140mA at 25°C. The on-resistance (Rds On) is specified at a maximum of 20 Ohms when driven at 10V Vgs and 150mA Id. With a power dissipation of 625mW (Ta), it is suitable for applications requiring moderate power handling. The MOSFET utilizes Metal Oxide technology and is supplied in an E-Line (TO-92 compatible) through-hole package, presented in Tape & Reel (TR) for automated assembly. Key parameters include a gate-source threshold voltage (Vgs(th)) of 3.5V (Max) at 1mA and an input capacitance (Ciss) of 50pF (Max) at 25V. The operating temperature range is -55°C to 150°C. This component finds utility in various industrial and consumer electronics segments.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C140mA (Ta)
Rds On (Max) @ Id, Vgs20Ohm @ 150mA, 10V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Vgs(th) (Max) @ Id3.5V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V

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