ZVP2120GTC
MOSFET P-CH 200V 200MA SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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This Diodes Incorporated ZVP2120GTC is a P-Channel MOSFET designed for applications requiring high voltage and low current. It features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 200mA at 25°C. The device offers a maximum On-Resistance (Rds On) of 25 Ohms at 150mA and 10V gate-source voltage. With a threshold voltage (Vgs(th)) of 3.5V at 1mA, it operates efficiently with a 10V gate drive. The power dissipation is rated at 2W (Ta) in a surface mount SOT-223-3 package. This component is commonly utilized in power management, battery protection, and general-purpose switching applications within industrial and consumer electronics. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 25Ohm @ 150mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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