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ZVP2120A

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ZVP2120A

MOSFET P-CH 200V 120MA TO92-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVP2120A is a P-Channel MOSFET designed for through-hole mounting in a TO-92 package. This component offers a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 120mA at 25°C ambient. The device features a maximum on-resistance (Rds On) of 25 Ohms at 150mA and 10V gate-source voltage. With a gate-source threshold voltage (Vgs(th)) of 3.5V at 1mA, it operates with a maximum gate-source voltage of ±20V. The input capacitance (Ciss) is rated at a maximum of 100 pF at 25V. The ZVP2120A has a maximum power dissipation of 700mW (Ta) and an operating temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management and general-purpose switching applications across various industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Rds On (Max) @ Id, Vgs25Ohm @ 150mA, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id3.5V @ 1mA
Supplier Device PackageTO-92
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 25 V

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