ZVP2110GTC
MOSFET P-CH 100V 310MA SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZVP2110GTC is a P-Channel enhancement mode MOSFET designed for power switching applications. This device features a drain-source breakdown voltage (Vds) of 100V and a continuous drain current (Id) capability of 310mA at 25°C ambient. The Rds(on) is specified at a maximum of 8 Ohms when driven by 10V Vgs, with an Id of 375mA. The gate-source threshold voltage (Vgs(th)) is a maximum of 3.5V at 1mA. With a maximum power dissipation of 2W (Ta), this MOSFET is housed in a SOT-223-3 surface-mount package, also known as TO-261-4 or TO-261AA. Input capacitance (Ciss) is rated at a maximum of 100pF at 25V. The operating temperature range is from -55°C to 150°C (TJ). This component is commonly utilized in various industrial and consumer electronics, including power management circuits and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 310mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 375mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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