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ZVP2110ASTZ

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ZVP2110ASTZ

MOSFET P-CH 100V 230MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

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Diodes Incorporated P-Channel MOSFET, part number ZVP2110ASTZ, is designed for applications requiring a 100V drain-source breakdown voltage. This through-hole component, housed in an E-Line (TO-92 compatible) package, offers a continuous drain current of 230mA at 25°C and a maximum power dissipation of 700mW. The ZVP2110ASTZ features a low on-resistance of 8 Ohms at 375mA and 10V gate-source voltage. Key specifications include an input capacitance (Ciss) of 100pF at 25V and a gate-source voltage range of ±20V. The threshold voltage (Vgs(th)) is a maximum of 3.5V at 1mA. This device is suitable for use in various electronic systems, including power management and general-purpose switching. The ZVP2110ASTZ is supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C230mA (Ta)
Rds On (Max) @ Id, Vgs8Ohm @ 375mA, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id3.5V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 25 V

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