ZVP2110ASTOA
MOSFET P-CH 100V 230MA E-LINEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZVP2110ASTOA is a P-Channel MOSFET designed for applications requiring robust voltage handling and efficient switching. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 230mA at 25°C. With a maximum power dissipation of 700mW (Ta), it is suitable for moderate power handling. The On-Resistance (Rds On) is specified at a maximum of 8 Ohms at 375mA and 10V.
Key electrical characteristics include a gate-source threshold voltage (Vgs(th)) of 3.5V at 1mA and a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is typically 100pF at 25V. The device operates across a temperature range of -55°C to 150°C. Supplied in an E-Line (TO-92 compatible) through-hole package, this MOSFET is commonly utilized in power management, consumer electronics, and industrial control systems. The part is available on Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 375mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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