ZVNL120CSTZ
MOSFET N-CH 200V 180MA E-LINEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZVNL120CSTZ is an N-Channel MOSFET designed for applications requiring 200V drain-source voltage. This through-hole component, housed in an E-Line (TO-92 compatible) package, offers a continuous drain current of 180mA at 25°C and a maximum power dissipation of 700mW. Key parameters include a Vgs(th) of 1.5V at 1mA, a maximum Rds On of 10 Ohms at 250mA and 5V Vgs, and an input capacitance (Ciss) of 85 pF at 25V. Drive voltages for optimal Rds On are 3V and 5V, with a maximum Vgs of ±20V. This component is suitable for general-purpose switching and amplification in various industrial and consumer electronics sectors. The ZVNL120CSTZ is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 250mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V |
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