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ZVNL120C

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ZVNL120C

MOSFET N-CH 200V 180MA TO92-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVNL120C is an N-Channel MOSFET designed for applications requiring high voltage switching. This device features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 180mA at 25°C ambient temperature. The ZVNL120C offers a maximum on-resistance (Rds On) of 10 Ohms at 250mA drain current and 5V gate-source voltage, with drive voltages ranging from 3V to 5V for optimal Rds On performance. With a gate-source voltage tolerance of ±20V and a threshold voltage (Vgs(th)) of 1.5V at 1mA, precise control is achievable. The device is packaged in a standard TO-92 (TO-226-3) through-hole configuration, dissipating a maximum of 700mW at 25°C ambient. This component is suitable for use in general-purpose switching and high-voltage control circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Rds On (Max) @ Id, Vgs10Ohm @ 250mA, 5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageTO-92
Drive Voltage (Max Rds On, Min Rds On)3V, 5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 25 V

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