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ZVNL120ASTOB

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ZVNL120ASTOB

MOSFET N-CH 200V 180MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVNL120ASTOB is a 200V N-Channel MOSFET designed for through-hole mounting in an E-Line package, compatible with TO-92 footprints. This component offers a continuous drain current of 180mA at 25°C with a maximum power dissipation of 700mW. Key electrical characteristics include a drain-to-source voltage (Vdss) of 200V, a gate-source voltage limit (Vgs(max)) of ±20V, and a typical gate threshold voltage (Vgs(th)) of 1.5V at 1mA. The on-resistance (Rds On) is specified at a maximum of 10 Ohms at 250mA and 10V gate drive. Input capacitance (Ciss) is rated at 85 pF maximum with a drain-to-source voltage of 25V. Operating temperature ranges from -55°C to 150°C. This device is suitable for applications in power management and general switching. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Rds On (Max) @ Id, Vgs10Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)3V, 5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 25 V

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