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ZVNL120ASTOA

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ZVNL120ASTOA

MOSFET N-CH 200V 180MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVNL120ASTOA is an N-Channel MOSFET designed for through-hole mounting in an E-Line package, compatible with TO-92 footprints. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 180mA at 25°C ambient. Maximum power dissipation is 700mW (Ta). Key parameters include a maximum on-resistance (Rds On) of 10 Ohms at 250mA and 10V Vgs, and an input capacitance (Ciss) of 85 pF maximum at 25V Vds. The gate-source threshold voltage (Vgs(th)) is 1.5V maximum at 1mA, with a maximum gate-source voltage (Vgs) of ±20V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications in industrial and consumer electronics requiring high voltage switching. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Rds On (Max) @ Id, Vgs10Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)3V, 5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 25 V

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