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ZVNL110ASTZ

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ZVNL110ASTZ

MOSFET N-CH 100V 320MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVNL110ASTZ is an N-channel MOSFET designed for through-hole mounting in an E-Line package, compatible with TO-92 footprints. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 320mA at 25°C, with a maximum power dissipation of 700mW. The on-resistance (Rds On) is specified as a maximum of 3 Ohms at 500mA and 10V gate-source voltage. Gate-source threshold voltage (Vgs(th)) is a maximum of 1.5V at 1mA. Input capacitance (Ciss) is 75pF at 25V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C320mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds75 pF @ 25 V

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