ZVN4525E6TC
MOSFET N-CH 250V 230MA SOT23-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZVN4525E6TC is an N-Channel MOSFET designed for robust performance in demanding applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 230mA at 25°C, with a maximum power dissipation of 1.1W (Ta). The device exhibits a low on-resistance (Rds On) of 8.5 Ohms maximum at 500mA and 10V, supported by a gate drive voltage range from 2.4V to 10V. Key parameters include a gate charge (Qg) of 3.65 nC maximum at 10V and input capacitance (Ciss) of 72 pF maximum at 25V. Operating across an industrial temperature range of -55°C to 150°C, the ZVN4525E6TC is housed in a compact SOT-23-6 package, supplied on tape and reel. This MOSFET is suitable for use in power management, industrial automation, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.4V, 10V |
| Vgs (Max) | ±40V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 72 pF @ 25 V |
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