ZVN4310GTC
MOSFET N-CH 100V 1.67A SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated ZVN4310GTC is an N-Channel MOSFET designed for robust power control applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 1.67A at 25°C ambient. The on-state resistance (Rds On) is a maximum of 540mOhm at 3.3A and 10V Vgs. It supports a gate-source voltage range of ±20V, with a typical threshold voltage (Vgs(th)) of 3V at 1mA. The device offers a maximum power dissipation of 3W (Ta) and an input capacitance (Ciss) of 350 pF at 25V. Mounted in a SOT-223-3 (TO-261-4) package, this MOSFET is suitable for use in various industrial and consumer electronics applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.67A (Ta) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN2009LSS-13
MOSFET N-CH 20V 12A 8SOP
DMTH6016LFVW-7
MOSFET N-CH 60V 41A POWERDI3333
DMTH6006LPSWQ-13
MOSFET N-CH 60V 17.2A/100A PWRDI
