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ZVN4306GVTC

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ZVN4306GVTC

MOSFET N-CH 60V 2.1A SOT223

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVN4306GVTC is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 2.1 A at 25°C. With a maximum power dissipation of 3W (Ta), it is suitable for thermal management in compact designs. The Rds On is specified at a maximum of 330mOhm at 3A, 10V, with drive voltages ranging from 5V to 10V. Input capacitance (Ciss) is a maximum of 350 pF at 25 V. The device is housed in a SOT-223-3 surface mount package (TO-261-4, TO-261AA) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.1A (Ta)
Rds On (Max) @ Id, Vgs330mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageSOT-223-3
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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