ZVN4210GTC
MOSFET N-CH 100V 800MA SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZVN4210GTC is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 800mA at 25°C, with a maximum power dissipation of 2W. The device exhibits a low on-resistance (Rds On) of 1.5 Ohm at 1.5A and 10V Vgs, and a threshold voltage (Vgs(th)) of 2.4V at 1mA.
The ZVN4210GTC utilizes Metal Oxide technology and is housed in a SOT-223-3 package (TO-261-4, TO-261AA) for surface mount applications. It supports gate-source voltages up to ±20V and has an input capacitance (Ciss) of 100 pF at 25V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in industrial control, automotive, and consumer electronics sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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