ZVN4210ASTOA
MOSFET N-CH 100V 450MA E-LINEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated ZVN4210ASTOA is an N-Channel enhancement mode MOSFET designed for general-purpose switching applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 450mA at 25°C. With a maximum power dissipation of 700mW (Ta) and a specified on-resistance (Rds On) of 1.5 Ohm at 1.5A and 10V Vgs, it offers efficient operation. The device utilizes a through-hole E-Line package, compatible with TO-92 footprints, and operates across a temperature range of -55°C to 150°C. Key parameters include a gate-source threshold voltage (Vgs(th)) of up to 2.4V at 1mA and input capacitance (Ciss) of 100pF at 25V. Drive voltages range from 5V to 10V for optimal Rds On performance. This MOSFET is suitable for use in industrial automation, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
DMN601WKQ-13
MOSFET N-CH 60V SOT323
DMN95H2D2HCTI
MOSFET N-CH 950V 6A ITO220AB
