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ZVN4206GVTC

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ZVN4206GVTC

MOSFET N-CH 60V 1A SOT223

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

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Diodes Incorporated ZVN4206GVTC is an N-Channel MOSFET designed for general-purpose switching applications. This surface-mount device, housed in a SOT-223-3 package (TO-261-4, TO-261AA), offers a continuous drain current of 1A at 25°C with a drain-to-source voltage of 60V. Key parameters include a maximum Rds(on) of 1 Ohm at 1.5A and 10V Vgs, and an input capacitance (Ciss) of 100 pF at 25V. The device supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3V at 1mA. With a maximum power dissipation of 2W (Ta), it is suitable for operation across a temperature range of -55°C to 150°C. This MOSFET finds application in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageSOT-223-3
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 25 V

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