ZVN4206ASTOA
MOSFET N-CH 60V 600MA E-LINEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZVN4206ASTOA is a N-Channel MOSFET designed for various electronic applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 600mA at 25°C. The Rds On is specified at a maximum of 1 Ohm when carrying 1.5A with a gate-source voltage (Vgs) of 10V. Power dissipation is rated at 700mW (Ta). This MOSFET is housed in an E-Line package, compatible with TO-92 form factors, and is supplied on tape and reel. Key parameters include a maximum gate-source voltage (Vgs) of ±20V and a typical threshold voltage (Vgs(th)) of 3V at 1mA. Input capacitance (Ciss) is a maximum of 100pF at 25V. The ZVN4206ASTOA is suitable for use in power management, consumer electronics, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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