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ZVN4106FTC

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ZVN4106FTC

MOSFET N-CH 60V 200MA SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVN4106FTC is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 200mA at 25°C. The on-resistance (Rds On) is specified as a maximum of 2.5 Ohms at 500mA and 10V gate-source voltage. It offers a maximum power dissipation of 350mW at 25°C. The device utilizes Metal Oxide technology and is packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount configuration, supplied on tape and reel. Key specifications include an input capacitance (Ciss) of 35pF at 25V and a gate-source threshold voltage (Vgs(th)) of 3V at 1mA. The operating temperature range is -55°C to 150°C. This MOSFET is commonly employed in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs2.5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds35 pF @ 25 V

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