ZVN3320ASTOB
MOSFET N-CH 200V 100MA E-LINEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZVN3320ASTOB is an N-Channel MOSFET designed for applications requiring high voltage switching. It features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 100mA at 25°C. This device offers a typical on-resistance (Rds On) of 25 Ohms at 100mA and 10V gate-source voltage, with a specified gate drive voltage of 10V. The input capacitance (Ciss) is a maximum of 45 pF at 25V. The MOSFET is housed in an E-Line package, compatible with TO-92 footprints, and is supplied on tape and reel. This component is suitable for use in general-purpose switching and amplification circuits across various industrial sectors. The maximum power dissipation is 625mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 25Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 25 V |
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