ZVN3310ASTOB
MOSFET N-CH 100V 200MA E-LINEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET ZVN3310ASTOB. This device features a 100V drain-to-source breakdown voltage and a continuous drain current capability of 200mA at 25°C. The on-resistance is specified as a maximum of 10 Ohms at 500mA and 10V gate-source voltage. With a maximum power dissipation of 625mW (Ta), this MOSFET is housed in an E-Line package, compatible with TO-92 footprints, and supplied on tape and reel. Key parameters include a 40pF maximum input capacitance at 25V and a gate-source threshold voltage of 2.4V at 1mA. The operating temperature range is -55°C to 150°C. This component is suitable for applications requiring low-power switching and amplification, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 25 V |
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