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ZVN3306ASTOA

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ZVN3306ASTOA

MOSFET N-CH 60V 270MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVN3306ASTOA is an N-Channel MOSFET designed for general-purpose switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 270mA at 25°C. The Rds(on) is specified at a maximum of 5 Ohms when driven at 500mA with a 10V gate-source voltage. With a power dissipation of 625mW (Ta) in a TO-92 compatible E-Line package, the ZVN3306ASTOA is suitable for various industrial and consumer electronics. Key parameters include an input capacitance (Ciss) of 35pF (max) at 18V and a gate threshold voltage (Vgs(th)) of 2.4V (max) at 1mA. The device operates across a temperature range of -55°C to 150°C. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C270mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Vgs(th) (Max) @ Id2.4V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds35 pF @ 18 V

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