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ZVN2110ASTOB

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ZVN2110ASTOB

MOSFET N-CH 100V 320MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVN2110ASTOB is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 320mA at 25°C ambient. The device exhibits a maximum On-Resistance (Rds On) of 4 Ohms at 1A and 10V Vgs. With a Gate-Source Voltage (Vgs) tolerance of ±20V and a Threshold Voltage (Vgs(th)) of 2.4V at 1mA, it offers robust gate control. Key parameters include an Input Capacitance (Ciss) of 75pF at 25V and a maximum power dissipation of 700mW. The ZVN2110ASTOB is housed in an E-Line package, compatible with TO-92 footprints, and supplied on Tape & Reel (TR) for automated assembly. Industries utilizing this component include industrial automation and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C320mA (Ta)
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id2.4V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds75 pF @ 25 V

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