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ZVN2110ASTOA

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ZVN2110ASTOA

MOSFET N-CH 100V 320MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVN2110ASTOA is a through-hole N-channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 320mA at 25°C (Ta). The Rds(on) is specified at 4Ohm maximum at 1A and 10V Vgs, with a recommended gate drive voltage of 10V. Input capacitance (Ciss) is 75pF maximum at 25V. The device offers a maximum power dissipation of 700mW (Ta) and operates across a temperature range of -55°C to 150°C (TJ). Packaged in an E-Line (TO-92 compatible) format and supplied on Tape & Reel (TR), this MOSFET is suitable for use in industrial automation, consumer electronics, and power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C320mA (Ta)
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id2.4V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds75 pF @ 25 V

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