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ZVN2106GTC

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ZVN2106GTC

MOSFET N-CH 60V 710MA SOT223

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZVN2106GTC is an N-Channel MOSFET designed for efficient switching applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 710mA at 25°C. The device offers a maximum on-resistance (Rds On) of 2 Ohms at 1A and 10V gate-source voltage. With a 2W maximum power dissipation (Ta) and a drive voltage requirement of 10V for optimal Rds On performance, it is suitable for various electronic designs. Key electrical characteristics include an input capacitance (Ciss) of 75pF at 18V and a gate threshold voltage (Vgs(th)) of 2.4V at 1mA. The ZVN2106GTC utilizes Metal Oxide technology and is housed in a SOT-223-3 package for surface mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly found in power management circuits and general-purpose switching applications across industries such as consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C710mA (Ta)
Rds On (Max) @ Id, Vgs2Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.4V @ 1mA
Supplier Device PackageSOT-223-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds75 pF @ 18 V

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