ZVN2106ASTOA
MOSFET N-CH 60V 450MA E-LINEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number ZVN2106ASTOA, is a 60V device designed for through-hole mounting in an E-Line package, compatible with TO-92 footprints. This component features a continuous drain current (Id) of 450mA at 25°C and a maximum power dissipation of 700mW. The on-resistance (Rds On) is specified at 2 Ohms maximum for a drain current of 1A with a gate-source voltage (Vgs) of 10V. Key parameters include a gate-source breakdown voltage of ±20V, a threshold voltage (Vgs(th)) of 2.4V maximum at 1mA, and an input capacitance (Ciss) of 75pF maximum at 18V. Operating temperature range is -55°C to 150°C. This device is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 18 V |
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