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ZVN2106ASTOA

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ZVN2106ASTOA

MOSFET N-CH 60V 450MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel MOSFET, part number ZVN2106ASTOA, is a 60V device designed for through-hole mounting in an E-Line package, compatible with TO-92 footprints. This component features a continuous drain current (Id) of 450mA at 25°C and a maximum power dissipation of 700mW. The on-resistance (Rds On) is specified at 2 Ohms maximum for a drain current of 1A with a gate-source voltage (Vgs) of 10V. Key parameters include a gate-source breakdown voltage of ±20V, a threshold voltage (Vgs(th)) of 2.4V maximum at 1mA, and an input capacitance (Ciss) of 75pF maximum at 18V. Operating temperature range is -55°C to 150°C. This device is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C450mA (Ta)
Rds On (Max) @ Id, Vgs2Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id2.4V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds75 pF @ 18 V

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