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VN10LPSTOA

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VN10LPSTOA

MOSFET N-CH 60V 270MA E-LINE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated VN10LPSTOA is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Breakdown Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 270mA at 25°C ambient. The device offers a maximum Rds(On) of 5 Ohms at 500mA and 10V Vgs, with a gate-source threshold voltage (Vgs(th)) of 2.5V at 1mA. Key electrical parameters include an input capacitance (Ciss) of 60 pF at 25V. The VN10LPSTOA is housed in an E-Line (TO-92 compatible) package, available in Tape & Reel (TR) packaging. This MOSFET is suitable for use in various industries including consumer electronics and industrial control systems. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C270mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageE-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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