NMSD200B01-7
MOSFET N-CH 60V 200MA SOT363Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated NMSD200B01-7 is an N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source breakdown voltage of 60V and a continuous drain current capability of 200mA at 25°C ambient. The device offers a low on-resistance of 3 Ohms maximum at 50mA drain current and 5V gate-source voltage. Key parameters include a 5V to 10V drive voltage range, ±20V maximum gate-source voltage, and an input capacitance (Ciss) of 50pF maximum at 25V drain-source voltage. The NMSD200B01-7 includes an isolated Schottky diode and operates within a temperature range of -55°C to 150°C. It is supplied in a SOT-363 package, delivered on tape and reel. This MOSFET is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | SOT-363 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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