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MMBF170-7

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MMBF170-7

MOSFET N-CH 60V 500MA SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated MMBF170-7 is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) capability of 500mA at 25°C. The Rds On is specified at a maximum of 5 Ohms at 200mA and 10V Vgs. With a maximum power dissipation of 300mW at 25°C (Ta), it is housed in the compact SOT-23-3 package. Key parameters include a gate threshold voltage (Vgs(th)) of 3V at 250µA and input capacitance (Ciss) of 40pF at 10V. Operating temperature range is -55°C to 150°C. This device is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V

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