DMWSH120H90SM4Q
SIC MOSFET BVDSS: >1000V TO247-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMWSH120H90SM4Q is an N-Channel Silicon Carbide MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous Drain current (Id) of 40A at 25°C. The device offers a low on-resistance of 97.5 mOhm maximum at 20A, 15V, with a maximum power dissipation of 235W at the case temperature. The gate drive voltage range is specified as 15V for optimal Rds On, with maximum and minimum gate-source voltages of +19V and -8V respectively. Key parameters include a maximum gate charge of 47.6 nC at 15V and an input capacitance (Ciss) of 1112 pF at 1000V. The DMWSH120H90SM4Q is housed in a TO-247-4 package, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This component is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 97.5mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 235W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.6 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1112 pF @ 1000 V |
| Qualification | AEC-Q101 |
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